发明名称 TESTING PROCESS OF ELECTRONIC DEVICE AND APPARATUS THEREOF
摘要 PURPOSE:To detect any defective part for identifying the material thereof by a method wherein a substrate loaded with a device to be measured is irradiated with electron beams to detect secondary electrons as well as to compare the fluctuation in the secondary electron signal level depending on positions with the reference pattern. CONSTITUTION:A substrate 4 of electronic device arranged on a stage 5 is irradiated with electronic beam 1 through a deflection electrode 2 and an objective lens 3. A substrate voltage power supply 6 is provided to restrain the charging up of the substrate 4. Next, the secondary electrons generated from the substrate 4 irradiated with the beams 1 are detected by the secondary detector 7 to be inputted to an amplifier 8 and then the fluctuation in the secondary electron signal level is displayed on a CRT 9. Then the scanning signals of beam 1 transmitted from a scanning signal transmitter 10 are operated by voltage supplied for the reflection electrode 2 through the intermediary of a deflection amplifier 11 and a multiplying factor measuring circuit 12. Through these procedures, the secondary electrons can be detected to compared the fluctuation in secondary electron level depending on positions of electron devices with the reference pattern for detecting any defective parts to identify the material thereof.
申请公布号 JPS62112336(A) 申请公布日期 1987.05.23
申请号 JP19850252015 申请日期 1985.11.12
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 YOSHIZAWA MASAHIRO;KIKUCHI AKIRA;WADA YASUSHI
分类号 H01L21/66;G01R31/26;G01R31/302;H01J37/28 主分类号 H01L21/66
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