发明名称 THIN-FILM MANUFACTURING APPARATUS
摘要 PURPOSE:To reduce strain due to stress applied on a substrate, by providing a substrate-heating device on the upper side of the substrate, using a material having good reflecting efficiency directly below the substrate, arranging a shutter having a concave spherical surface structure, and simultaneously heating the top and back surfaces of the substrate. CONSTITUTION:A substrate 2 is heated with a heater 3 up to a thin-film forming temperature. The back surface of the substrate 2 is heated by the radiated heat of the heater 3. At the same time, the radiated heat is reflected by a metal shutter 4 made of gold, aluminum or the like, which is provided directly below the substrate 2 and has a concave spherical structure and good reflecting efficiency. The heat is reflected to the top surface of the substrate 2, which is the thin-film forming side. The surface is heated to the thin-film forming temperature. After the substrate 2 is heated to the thin-film forming temperature by a magnetic-field generating coil 8, the temperature is kept at this level for a while. An evaporation source 5 is sufficiently fused by the method such as an electron beam or resistor heating. Then, the shutter 4 is opened, and a thin film is grown on the substrate 2. The thin-film forming temperature is set at 200 deg.C. As the evaporation source, Permalloy ingot is used. A Permalloy thin film has been grown by about 300Angstrom under working pressure of 1X10<-6>Torr.
申请公布号 JPS62111485(A) 申请公布日期 1987.05.22
申请号 JP19850251308 申请日期 1985.11.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 WADA KUMIKO;TAKEUCHI HIROSHI
分类号 H01L49/02;C23C14/24;C23C14/54 主分类号 H01L49/02
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