| 摘要 |
PURPOSE:To organic semiconductor, obtained by reacting a nitrogen oxide with a condensed heterocylic compound expressed by a specific formula, having improved oxidation resistance and useful as an antistatic material, electromagnetic wave shielding material, electronic and optical functional element, optical memory, etc. CONSTITUTION:(A) A nitrogen oxide expressed by the formula NOmX (X is halogen-containing inorganic group; m is 1 or 2), preferably NOBF4, NO2BF4, NOPF6 or NOAsF6, is reacted with (B) a condensed heterocyclic compound expressed by formula I or II [R<1> and R<2> are H, alkyl, alkoxy, aryl, allyloxy, thioether, amino, halogen, aldehyde, cyano or nitro; Y is >N-R<3> (R<3> is H, alkyl or aryl), >0, >S or >Se], e.g. carbazole or indole, preferably in the liquid phase at -10-+60 deg.C for 1-50hr to afford the aimed organic semiconductor.
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