| 摘要 |
PURPOSE:To attain the miniaturization, thin profile, low power consumption and the improvement of mass-productivity and the high performance of a reception circuit by adopting an SOS structure and employing a dual gate MOS electric field effect transistor (TR) for at least one of circuit blocks. CONSTITUTION:The dual gate MOS field effect TR is formed on the SOS structure and the TR is used in the common source circuit, then remarkably high frequency and low power configuration is attained by shielding the 2nd gate in terms of AC. Figure shows a differential amplifier IC where the dual gate MOS TR is used for a high frequency amplifier circuit block. A drain 30 is connected to a load and a power supply and the TR is used by the common source circuit. The 2nd gate 38 is connected to common in terms of AC and the gain control terminal is fixed to an optimum bias.
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