| 摘要 |
PURPOSE:To form a-Si having uniform thickness and quality of the film by regulating the flow of reaction gas to flow uniformly and perpendicularly to the axis of a reactor over the whole length of the reactor by constructing count er electrodes of plural independent electrodes arranged with a distance to each other in parallel to an axis of a cylindrical electroconductive base body. CONSTITUTION:An Al cylindrical base body 5 is fitted to a supporting body 4 revolved around a perpendicular axis by a motor 3 provided to a vacuum tank 2 on a supporting base 1, and electrodes 61, 62 are arranged confronting the base body 5. An introducing pipe 12 for feeding SiH4 uniformly to over the whole length of the base body is provided perpendicularly to the cylindrical axis of the base body 5 to near the outside of a space 141 of one of the electrodes 61, 62, and SiH4 is discharged from another space 142. The vacuum tank 2 is evacuated in this constitution through an evacuation port 8, and SiH4 in a gas cylinder 9 is introduced through an introducing pipe 12, and glow discharge is generated by impressing an electric voltage across the base body 5 and electrodes 61, 62. Thus, reaction gas flows uniformly along the base body 5 forming a-Si film having uniform thickness and quality of the film. |
