| 摘要 |
PURPOSE:To obtain a photoconductive member having superior photosensitivity by successively forming a photoconductive amorphous layer contg. Si, Ge and N distributed ununiformly in the thickness direction and an amorphous layer contg. Si and O on a support. CONSTITUTION:The 1st photoconductive layer 102 of amorphous silicon germanium hydride or amorphous silicon germanium halide as an amorphous material is formed on a support 101 of Al or the like by glow discharge, sputtering or other method. At this time, a layered region contg. N atoms distributed ununiformly in the thickness direction is formed in the layer 102. It is preferable that the concn. of N atoms is made higher on the support 101 side. The 2nd layer 103 of an amorphous material contg. Si atoms and O atoms is then formed on the layer 102 to obtain the desired photoconductive member 100. |
