| 摘要 |
PURPOSE:To obtain a photoconductive member having superior photosensitivity by forming an amorphous layer contg. Si and N on a photoconductive layer contg. C and consisting of an amorphous layer contg. Si, Ge distributed ununiformly in the thickness direction and a conductivity controlling substance and of an amorphous layer contg. Si. CONSTITUTION:A layered region 104 made of an amorphous material contg. Si atoms and ununiformly distributed Ge atoms and a photoconductive layered region 105 made of an amorphous material contg. Si atoms are successively laminated on a support 101 to form the 1st layer 102. At this time, C atoms are incorporated into the layer 102. More Ge atoms are distributed on the support 101 side in the region 104, and the region 104 contains a conductivity controlling substance such as a III or V group element in the periodic table. The 2nd layer 103 of an amorphous material contg. Si atoms and N atoms is then formed on the layer 102 to obtain the desired photoconductive member 100. |
