发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To shorten the transmission time of the output low/high state of the switching time by sinking the base electric charge of the 4th transistor as the collector current of the 2nd transistor whose base is connected to the emitter of the 1st transistor. CONSTITUTION:When a signal of a high level is supplied to the base of the 1st transistor TR4, the TR4 conducts and then the 2nd TR5 conducts. The base electric charge of the 4th TR7 is sunk via the 1st Schottky diode 12 and the TR7 is nonconductive. While the 5th and 6th transistors TR8 and TR9 conduct when the TR4 conducts and the 3rd tR6 is nonconductive. Thus, a current flows to an output terminal 3 from a high potential power supply terminal 1 via a resistance 15 and the potential of the terminal 3 is set at a high level. In such a way, the TR5 conducts immediately after the TR4 conducts and the base electric charge of the TR7 is extracted.
申请公布号 JPS62109427(A) 申请公布日期 1987.05.20
申请号 JP19850249583 申请日期 1985.11.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKI YOICHIRO
分类号 H03K19/088;H03K19/013 主分类号 H03K19/088
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