| 摘要 |
PURPOSE:To obtain a pressure sensitive transistor having high sensitivity which has a ready assembling, utilizes anisotropic stress effect without damage of a semiconductor element by forming a hole at the center of an element having a transistor structure at a periphery, securing the element to a pedestal having a recess, and providing a pressure plate over the hole on the upper surface of the element. CONSTITUTION:A semiconductor element 10 having a hole 9 at the center is secured at the center of the hole on a pedestal 4 having a recess 7 oppositely to the center of the recess 7. A pressure plate 11 is contacted over the hole 9 on the upper surface of the element 10. For example, the pedestal 4 has a recess 7 at the center, and a pressure sensitive chip 10 having the same width as the pedestal 4 is bonded at both ends via an adhesive 8 to the high portion of the pedestal 4. The chip 10 has at the center a rectangular hole 9, and a rectangular base layer 2 formed directly above both ends of the recess 7, and an emitter layer 1 similar to the layer 2 formed therein by diffusing an impurity from an upper surface. A pressure plate 11 having an area larger than the hole 9 is placed at the center on the upper surface of the chip 10.
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