| 摘要 |
<p>A semiconductor resistance element used in a semiconductor integrated circuit containing a plurality of MESFET's or JFET's (Q1, 03) as active elements, for interconnecting the active elements or for connecting to an external circuit, etc. This semiconductor resistance element is constituted by interconnecting the drain and gate electrodes of a MESFET or JFET (Q2) and limiting the drain current thereof within a given range. The semiconductor resistance element may provide a resistance value with high accuracy and may be used in, for example, a level shift circuit.</p> |
