SEMICONDUCTOR STRUCTURES HAVING POLYSILOXANE LEVELING FILM

摘要

A semiconductor structure comprising a substrate having at least one stepped topographical surface and a polysiloxane dielectric leveling layer disposed on said topographical surface. The topographical surface can include a layer of metallization as well as a layer of glass coating disposed on the metallization layer. The polysiloxane layer has good high temperature stability (450 DEG C) and adherence to metal layers and can be readily etched using dry processing.