| 摘要 |
PURPOSE:To obtain the titled element having an excellent optical characteristics by changing an accelerating voltage of an electron beam in a range of a low accelerating voltage so as to correspond to a shape of the titled element, thereby forming directly an image on the positive type electron beam resist, and by effecting a developing treatment, thereby changing the thickness of the electron beam resist film. CONSTITUTION:The positive type electron beam resist 12 is coated on a substrate 11, for example, in 1.3mum thickness, and an antistatic film 13 is vacuum- deposited on the resist 12 in 100Angstrom thickness. The image is formed directly on the positive type electron beam resist 12 by changing the accelerating voltage of the electron beam 14 in the range of the low accelerating voltage so as to correspond to the shape of the formed grating 12'. Thus, a depth of entering the electron beam 14 within the electron beam resist layer 12 becomes small, depending upon the accelerating voltage. Eve if a light exposure is somewhat excess, the thickness of the film after developing almost becomes constant. |
