Dielectrically isolated integrated circuit device and method of making.

摘要

A method of fabricating dielectrically isolated integrated circuit devices, comprising the following steps:
using a semiconductor substrate with upper and lower portions (14, 12), doping said upper portion (14) of said substrate in accordance with types of devices to be formed, said lower portion (12) of said substrate forming a plurality of subcollectors.

  (i)(a) forming a masking layer (20) over said substrate;
  (i)(b) etching a plurality of holes (30) in said masking layer; and
  (i)(c) isotropically etching a plurality of active device regions (40) in said substrate through said holes,
  (ii) growing an oxide layer (50) over portions of said substrate where said devices are to be formed;
  (iv) forming said devices by selective epitaxial growth in said regions (40).