| 摘要 |
PURPOSE:To relatively readily form a corrugation having LAMBDA/4 phase phase shift with a sole resist material by dividing the coated region of a resist film, forming a step, and asymmetrically forming the exposing angles of 1 luminous fluxes by 2 luminous flux interference exposing method. CONSTITUTION:An oxide film (SiO2 film) 4 is, for example, laminated on a laser substrate 1 to be formed with a corrugation, and patterned to form the first region 5 from which the SiO2 film is removed and the second region 6 in which the SiO2 film remains. After the entire surface is then coated with a resist film 7, 2 luminous flux interference exposing method is executed. The center line of emitting the two luminous fluxes is inclined at theta0 to the perpendicular surface of the substrate at this time. After the film 7 is then developed, with the patterned film 7 as a mask only the film 4 is etched by RIE method. With the pattern on the substrate as a mask the substrate is then etched, the resist film and the SiO2 film are then removed to obtain corrugations having LAMBDA/4 phase difference. |
