| 摘要 |
PURPOSE:To obtain the titled element which has high speed responding characteristic and can ignore the influence of a capacity without loss of quantum efficiency by laminating a pair or more of semiconductor layers having opposite conductivity types on a semi-insulating semiconductor substrate, and providing a pair of electrodes for applying voltages of the same potential from the uppermost layer to the lowermost layer. CONSTITUTION:Semiconductor layer 1-4 having opposite conductivity types are alternately laminated with a pair or more thereof on a semi-insulating semiconductor substrate 1, and a pair of electrodes 5, 6 for applying voltages of the same potential from the uppermost layer 4 to the lowermost layer 2 of the laminated layers are provided. A 3-layer structure in which an N-type InGaAs layer 2, a P-type InGaAs layer 3 and an N-type InGaAs layer 4 are sequentially crystal-grown on the substrate 1 is, for example, formed so that the impurity density and the thickness of the layers are up to 1X10<15>cm<-3>, and up to 3,000Angstrom . The InGaAs of the other region is removed only with the photo detector remained by mesa etching, and a pair of electrodes 5, 6 are formed at both ends of the photo detector to apply a lateral electric field uniformly to the layers.
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