| 摘要 |
PURPOSE:To secure the isolation of a wide band between two traveling wave type FET amplifiers by using a resistance having the prescribed resistance value to attain the connection between two prescribed positions opposite to each other of the reactance circuits set at the drain sides of said two FET amplifiers. CONSTITUTION:A resistance 20 having the prescribed resistance value is used to secure the connection between the prescribed areas opposite to each other in a reactance circuit which is used for connection between drain electrodes of two traveling wave type FET amplifier. In other words, the unbalanced microwave electric power, if caused between two microwaves reached at a T branch 12 owing to the variance of performance between both FET 3a and 3b, is absorbed by each resistance 20 in response to the frequency. In such a way, the isolation is secured in a wide band between both FET amplifiers. |
