发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To reduce the power consumption by preventing a DC current from flowing to an area between the power supply terminals not only in case the input/output voltage is kept at a constant level but in a period when the constant state of said voltage is charged. CONSTITUTION:A CMOS contains a pMOSQ1 having its -2.5V threshold value and an nMOSQ2 having its +2.5V threshold value. When the input voltage Vi is lower than +2.5V, the pMOSQ1 and nMOSQ2 are turned on and off respectively and the output voltage V0 is approximate to +5V. While the pMOSQ1 and nMOSQ2 are turned off and on respectively if the voltage Vi is higher than +2.5V and the voltage V0 is approximate to the earth potential. Thus the function of a NOT gate is secured.
申请公布号 JPS62109430(A) 申请公布日期 1987.05.20
申请号 JP19850250202 申请日期 1985.11.07
申请人 NEC CORP 发明人 SUZUKI SHUNICHI
分类号 H03K17/687;H03K19/00;H03K19/0948 主分类号 H03K17/687
代理机构 代理人
主权项
地址