发明名称 RESIN SEAL TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent disconnections due to the corrosion of an Al wiring by generating an electric field by applying positive voltage to one and negative voltage to the other while being oppositely faced into a sealing region just above a semiconductor element and mounting two electrode plates integrating ionic impurities in a resin. CONSTITUTION:A resin seal type semiconductor device has electrode plates 1, 2 integrating ionic impurities, such as Cl<->, Na<+>, etc., a semiconductor element 3 and a lead frame 4, and is sealed with a resin 8. Positive voltage is applied to the electrode plate 1 from an electrode-plate terminal 11 and negative voltage to the electrode plate 2 from an electrode-plate terminal 21 respectively, thus forming an electric field. Ions having negative charges such as Cl are integrated to the electrode plate 1 having positive voltage by the electric field, and ions having positive charges such as Na<+> are integrated to the electrode plate 2 having negative voltage. Accordingly, disconnections and deterioration due to the corrosion of Al wirings of the semiconductor element can be prevented.
申请公布号 JPS62108553(A) 申请公布日期 1987.05.19
申请号 JP19850249467 申请日期 1985.11.06
申请人 NEC CORP 发明人 SAITO TAKEHIRO
分类号 H01L23/50;H01L21/48;H01L23/26 主分类号 H01L23/50
代理机构 代理人
主权项
地址