发明名称 |
Via metallization using metal fillets |
摘要 |
A method is provided for semiconductor manufacture wherein a via is defined and etched through an insulative layer of the device to an underlying conductive region and metal fillets are formed in the corner regions of the via. A conformal metal layer is then deposited onto the device and etched until all metal is removed from the insulative layer surface. Finally, a second metal interconnect layer is deposited onto the device and the desired interconnect pattern is defined. The fillets displace the metal subsequently deposited on the via side surface laterally toward the center of the via, thereby preventing severe self-shadowing problems and improving step coverage of metal into the via.
|
申请公布号 |
US4666737(A) |
申请公布日期 |
1987.05.19 |
申请号 |
US19860828186 |
申请日期 |
1986.02.11 |
申请人 |
HARRIS CORPORATION |
发明人 |
GIMPELSON, GEORGE E.;RIVOLI, ANTHONY L.;GASNER, JOHN T.;GEORGE, ELIAS W. |
分类号 |
H01L21/768;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|