| 摘要 |
PURPOSE:To arbitrary control film thickness on a step and flat substrate by the growth of one silicon oxide film by stepwisely varying the pressure at growing time. CONSTITUTION:A resist 4 is coated on a substrate on which a metal layer 2 is formed on a semiconductor substrate 1, the layer 2 is etched with the resist 4 as a mask, a step is formed, the resist is removed to obtain a semiconductor substrate having the step. This substrate is set in an oxide film growing unit, a silicon oxide film is initially grown under gas pressure or 0.3Torr at 400 deg.C of growing temperature, and an oxide film 3 is then formed under 0.8Torr by sequentially raising the gas pressure. As a result, the films 3 become different on the metal layer and the other flat surface. Thus, reaction gas pressure is stepwisely altered to grow an oxide film to suitably vary the film thickness on the substrate to that on the step.
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