| 摘要 |
PURPOSE:To improve an ingot yield by filling melted silicon in a separable graphite cast molds in which a mixture of one or more of oxide, nitride and carbide of silicon is coated on the inner surface, cooling to solidify the liquid, and then dividing the molds to remove the ingot. CONSTITUTION:Sections of molds are formed of four side walls 1, and one bottom plate, totally 5 divided plates, and assembled with screws 2. Powder which mainly contains silicon nitride is coated on the inner wall surface 3 of associated cast molds. After an ingot is cooled to room temperature, the screws 2 are removed to divide the molds, and the ingot is removed. After the ingot is removed, the molds are again associated, powder is coated on the inner wall surface, and the molds are repeatedly used. Thus, the yield of ingot utilizing portion is improved, and the cost of a polycrystalline silicon semiconductor is reduced. |
