| 摘要 |
PURPOSE:To reduce input capacitance by forming an opening section to the upper section of a gate in a gate-electrode metallic layer. CONSTITUTION:The upper section of a gate 5 is removed and a removing section 9 is shaped in a metallic layer 6 as a source electrode, thus reducing an area forming a capacitor, then minimizing capacitance. The reduction of capacitance by thickening an insulating film is also conducted simultaneously. That is, the gate 5 has a bent section, and the insulating film 41 in a section held between the metallic layer 6 and the gate 5 and the insulating film 42 in a section held between the gate 5 and a substrate 1 are each thickened, resulting in the reduction of capacitance. |
