| 摘要 |
PURPOSE:To grow in solid phase a polycrystalline semiconductor film by ion implanting an electrically inactive impurity to the film under specific conditions to form an amorphous semiconductor film, then annealing it, and growing in solid phase the amorphous semiconductor film. CONSTITUTION:An electrically inactive impurity is ion implanted to a polycrystalline semiconductor film 2 to form an amorphous semiconductor film, the film is then annealed, and the film is then grown in solid phase. The ion implantation is executed with energy of Rp>=(2/3)t, where t is the thickness of the film 2 and Rp is the projecting flying stroke of the impurity ions, dosage that the impurity density becomes 2X10<19>cm<-3> in the portion having 0.25Rp or larger of depth from the surface of the film. Thus, substantially complete amorphous semiconductor film is formed on the entire film thickness to uniformize the solid phase growth, thereby forming a polycrystalline semiconductor film having large crystal grain and high quality of film.
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