发明名称 HYBRID INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To simplify a process, to shorten a delivery time and to decrease the amount of materials to be used by making a semiconductor chip directly loaded onto a substrate and a semiconductor chip without performing protective- coating while containing a coated sheathing resin. CONSTITUTION:An external lead 4 is inserted to a glass epoxy substrate 1, a material connecting a semiconductor chip 2, a loading part 3 and the external lead 4 is printed or applied through application, etc., and the semiconductor chip 2 and the part 3 are mounted. Solder reflow and washing are executed when solder is used as an adhesive material, and Ag paste is baked when Ag paste is employed. The semiconductor chip 2 and the part 3 are mounted, the semiconductor chip is wired-bonded at a low temperature of 100-150 deg.C, and lastly the whole is coated with a sheathing resin 6. Phenol, silicone, etc. may also be used as the sheathing resin and dipping except powder coating, transfer molding, etc. are sheathing. Accordingly, processes are simplified and shortened, and a semiconductor-chip coating resin and a resin coating the whole substrate can be removed.
申请公布号 JPS62108554(A) 申请公布日期 1987.05.19
申请号 JP19850249471 申请日期 1985.11.06
申请人 NEC CORP 发明人 USHIGOME MASAO;SATO AKIO
分类号 H01L21/56;H01L23/28;H01L23/31;H05K3/28 主分类号 H01L21/56
代理机构 代理人
主权项
地址