| 摘要 |
PURPOSE:To decrease part constituting materials, to improve yield on assembly and to reduce cost by fixing an FET for high frequency onto a circuit substrate while fastening a capacitor onto a through-hole and connecting an upper electrode for the capacitor with a ground electrode for the FET for high frequency. CONSTITUTION:An insulating substrate 3 with conductor film circuits 2 is fixed onto a grounding conductor 1 and conductor films 10 are formed onto the inner surfaces of through-holes 9 bored into said substrate, and the grounding conductor 1 and the upper surface of a circuit substrate are connected. Capacitors 5 are fastened onto the through-holes 9, and upper-surface electrodes 6 for the capacitors 5 and ground electrodes 7 for a FET4 for high frequency fixed onto the same insulating substrate 3 are connected by wires 8, thus taking high-frequency grounding between the FET4 and the grounding conductor 1. Self-bias circuits are shaped through the capacitors 5 and the FET4 for high frequency is biassed. Accordingly, the decrease of part constituting materials, the improvement of yield on assembly and the reduction of cost can be attained. |
