发明名称 PHOTOSENSITIVE COMPOSITION FOR TWO-LAYERED POSITIVE AND PROCESS FOR FORMING PATTERN
摘要 PURPOSE:To provide a photosensitive compsn. having high sensitivity to ultraviolet rays by incorporating a sensitizer combining a Si-contg. material prepd. by (co)polymerizing with a specified substituted acetylenic compd., with a quinone compd. or a nitro compd., and a surface active agent. CONSTITUTION:The compsn. contains a sensitizer combining a Si-contg. material obtd. by (co)polymerizing with a substituted acetylenic compd. expressed by the formula I (where R1 is silyl or substituted silyl group; R2 is one selected from H, alkyl group, aromatic group, substituted aromatic group silyl group, substituted silyl group), with a quinone compd. or a nitro compd., and a surface active agent. A photoresist made of the compsn. has positive characteristics for ultraviolet rays. Since it is usable in the form of thin film, the resolving power of the photoresist is high. Moreover, since the sensitizer is dispersed uniformly by the effect of the surface active agent, the sensitivity for ultraviolet rays is high, so a pattern can be exposed in a very short time on a large base plate, as well as on a small base plate.
申请公布号 JPS62108244(A) 申请公布日期 1987.05.19
申请号 JP19850247193 申请日期 1985.11.06
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;SANYO CHEM IND LTD 发明人 MORITA MASAO;ONOSE KATSUHIDE;TAKADA KOICHI;MATSUKA HIDEHIKO;KISHIKI HIROSHI
分类号 G03F7/004;G03C1/72;G03F7/039;G03F7/11;G03F7/26 主分类号 G03F7/004
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