| 摘要 |
PURPOSE:To acquire a semiconductor pressure and differential pressure detector with less influence of a metal wiring film, by drawing a metal film for inner gauge resistance wiring out of a central thick part at first, and wiring it apart from a gauge resistance on a thin part, as for a silicon diaphragm with central thick part. CONSTITUTION:A central thick part 2, a thin part 3 around it, and a thick part 4 around it further are formed coaxially to make a silicon diaphragm 1. Next, a gauge resistor 5 to contact with the thick part 2 and a gauge resistor 6 to contact with the thick part 4 are diffused and formed respectively while positioning on the line on the surface of thin part 3. And then, most of the gauge resistors are covered with an SiO2 film 9. Al metal wiring films 10 and 11 are connected to the resistors 5 and 6 respectively while extending on them. The film 10 is connected to the inner resistor 5 as follows: It is drawn out of the central thick part 2 at first. It is bent here. The thin part 3 is traversed apart from the resistor 5. Then, its end is located on the thick part 4. |
