发明名称 |
BIAS SPUTTERING APPARATUS |
摘要 |
PURPOSE:To make film sticking velocity large and to contrive uniformalization of film thickness distribution of a base plate side by forming such a magnetic field distribution shape that both the direction of a magnetic line of force in a space near to a center part of the surface of a target and the direction of a magnetic line of force in a space near to a center part of the surface of a base plate are made to the opposite directions. CONSTITUTION:A discoid magnet 3 is provided to a side opposite to a base plate 1 via a base plate table 31 and a magnetic pole near to the base plate 1 is made to an N-pole and a magnetic pole reverse to the base plate 1 is made to an S-pole. The magnetic lines of force Y1-Y5 started from the center part of the surface of a target are not reached to the surface of the base plate 1 and returned to the outside periphery of the target. The magnetic lines of force Y'1-Y'4 having the direction opposite to the center part of the surface of the target are formed in the neighborhood of the surface of the base plate 1 as a component parallel to a CL axis of a magnetic field. On this occasion, strength of a magnetic field due to the magnet 3 is correlated with a magnetic field due to a magnet 2 of a magnetron cathode side and suitably selected. A sputtered film having uniform thickness can be formed on the surface of the base plate 1 by this magnetic field distribution and also uniform ion bombardment can be performed.
|
申请公布号 |
JPS62107064(A) |
申请公布日期 |
1987.05.18 |
申请号 |
JP19850247627 |
申请日期 |
1985.11.05 |
申请人 |
ANELVA CORP |
发明人 |
YOKOGAWA TOSHIO;HIRUKAWA YOUICHI;HOSOKAWA NAOKICHI |
分类号 |
C23C14/36;C23C14/35;H01L21/203;H01L21/31 |
主分类号 |
C23C14/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|