发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the performances of electrode by a method wherein a first metallic film is formed by evaporation in the oblique directions on a substrate, next a second metallic film smaller than the first metallic film is evaporated in the vertical direction onto the first metallic film successively to form multiple metallic films. CONSTITUTION:When a first metallic film 7 is evaporated, an evaporation source is moved so that evaporation beams may be emitted in the arrow directions C, D. The first metallic film 7 larger than the electrode pattern on upper end part of an overhangingly formed resin layer 2 is formed on a semiconductor substrate 1. Next a second metallic film 8 is formed by evaporation only on the first metallic film 7 using another evaporation source with vertical evaporation beams in the arrow direction E to the surface of substrate 1. Through these procedures, the second metallic film 8 does not stick on the surface of substrate 1 so that the electrode performances may be assured by the first metallic film 7 only to be improved notably as a result.
申请公布号 JPS62106623(A) 申请公布日期 1987.05.18
申请号 JP19850247351 申请日期 1985.11.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 KUBOTA MASAYUKI
分类号 H01L21/306;H01L21/28;H01L21/285;H01L21/302;H01L21/3065;H01L21/338;H01L29/80;H01L29/812 主分类号 H01L21/306
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