发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To set the memory cell data for a word line and to shorten a time necessary to the initial setting by adding a ROM cell which stores stack information to respective bit lines. CONSTITUTION:When an initial selecting signal (b) is at an H level, a word driver 6i and a word driver 12 for a ROM cell corresponding to the low address are simultaneously activated. Consequently, a word line 11 for a ROM cell is driven together with a word line 4 (i), by turning on a transfer gate TRj of a ROM cell 10j, the signal of a bit line is made into the earth level and all (i) column memory cell data are cleared. The action is repeated for the low address, all the memory cell data are initialized and the setting time is shortened.
申请公布号 JPS62107498(A) 申请公布日期 1987.05.18
申请号 JP19850246342 申请日期 1985.11.05
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 YAMADA JUNZO;MANO TSUNEO;MATSUMURA TSUNEO
分类号 G11C11/401;G11C11/34 主分类号 G11C11/401
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