发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To raise an access speed at the time of a memory is operated and to make unnecessary trimming process required for fuse melting, etc., by chang ing over a preliminary memory with a part of the main memory by a latch circuit. CONSTITUTION:The address of a detected false memory is supplied from an address terminal 30 and stored into a ROM 31. By the supply of an electric power source voltage Vdd, the contents of the ROM 13 are read to an address signal line 32 and a latch control signal line 33. Thus, latches 34, 35 36 in an address decoder 37 and a preliminary decoder 38 are started, the decoder is changed over and the program of the decoder 38 is executed. During the energizing, the changing-over condition is continued, the faulty memory address is inputted at the time of usual operation then, the decoder 38 is started and a preliminarily memory 39 is selected. Consequently, it is not necessary to compare addresses, the access speed is raised and the fuse melting, etc., are not necessary.
申请公布号 JPS62107500(A) 申请公布日期 1987.05.18
申请号 JP19850247454 申请日期 1985.11.05
申请人 MATSUSHITA ELECTRONICS CORP 发明人 KAWAHARA TAKU
分类号 G11C29/00;G11C29/04 主分类号 G11C29/00
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