| 摘要 |
PURPOSE:To improve a coupling efficiency between a photodetector and an optical fiber and improve photodetecting characteristics by providing an etching control layer among a plurality of semiconductor growth layers to control the depth of an aperture. CONSTITUTION:After a GaInAs layer 11 is formed on an InP substrate 1 by liquid phase deposition, an N<+> type InP layer 2, an N<-> type InP layer 3, an N-type GaInAs layer 4 and an N-type InP layer 5 are successively formed by liquid phase deposition. Then, after electrodes 7 and 8 are formed, the InP substrate 1 is etched to form an aperture. At that time, the N-type GaInAs layer 11 serves as a stopper. Then the N-type GaInAs layer 11 is etched with hydrochloric acid solution. With this constitution, the aperture is formed by removing the InP substrate 1 only so that a photodetector with a high coupling efficiency and little dark current can be obtained.
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