发明名称 SEMICONDUCTOR MANUFACTURING DEVICE
摘要 PURPOSE:To shorten the time for adjusting the pressure in the process chamber and to improve throughput by a method wherein process gas is statically stored and a gas reservoir means, which is used for introducing the stored process gas into the process chamber before the process gas is introduced, is provided. CONSTITUTION:Process gas is statically stored and a gas reservoir means 14, which is used for introducing the stored process gas into a process chamber 1 before the process gas from a process gas introducing system is introduced into the process chamber 1, is provided. Gas line valves 9 and 17 are turned into closed state and a gas line valve 13 is turned into opened state during the conveyance of a substrate and during the exhaust to a high vacuum and a time is waited until the pressure in the means 14 is boosted. If the pressure is boosted, a controller 8 and a gas valve 16 is closed. When the conveyance of a substrate and the exhaust to a high vacuum end have been completed, the valve 17 is opened and the process gas in the means 14 is introduced into the process chamber 1. When the pressure in the process chamber 1 and the pressure in the means 14 become equal, the valve 17 is closed, and the controller 8 and the valve 9 are opened. By this way, the throughput is improved.
申请公布号 JPS62106627(A) 申请公布日期 1987.05.18
申请号 JP19850246190 申请日期 1985.11.05
申请人 HITACHI LTD;HITACHI TECHNO ENG CO LTD 发明人 TADA KEIJI;NISHIHARA TOMOYOSHI;MARUMOTO MAKOTO;IKUHARA SHIYOUJI
分类号 H01L21/302;C23F1/00;C23F4/00;H01L21/3065 主分类号 H01L21/302
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