| 摘要 |
PURPOSE:To produce high-purity SiC powder having improved crystallinity and sintering property, by thermally decomposing a methylhydrogensilane compound of a specific composition in the vapor phase while heating and further heat-treating the resultant amorphous SiC powder. CONSTITUTION:At least one of methylhydrogensilane compound expressed by the general formula (CH3)aSibHc (b is 1-3; 2b+1>=a; a>b; 2b+1>=c>1; a+c=2b+2), e.g. CH3SiH3 or (CH3)2SiH2, etc., is, together with a carrier gas, e.g. H2, He, Ar or N2, etc., introduced into a tubular furnace and heated at 750-1,600 deg.C and thermally decomposed in the vapor phase to produce spherical amorphous SiC having <=50Angstrom crystalline size and 0.01-1mum average particle diameter of aggregate thereof, which is then thermally annealed at 350-1,800 deg.C to produce the aimed ultrahigh-purity fine SiC powder having improved crystallinity and sintering property. |
