PRODUCTION OF SILICON SUBSTRATE

摘要

PURPOSE:To produce a silicon substrate having proper high oxygen concentration and little defects without fail, by pulling up a silicon crystal at a proper high rate of crystal growth. CONSTITUTION:A heating means 4 composed of an electrical heater 5 is placed to the outer circumference of a quartz crucible and a magnetic field generation means 7 such as a permanent magnet is placed to the outside of the heating means 4 via a jacket 6. In the above crystal growth apparatus 1, a single crystal seed 8 attached to a pulling up chuck 9 is made to contact with a molten Si 3 in a crucible 2 and pulled up under rotation along reverse direction to the crucible 2 to effect the growth of a silicon crystal 10 at the end of the seed 8. The growth rate of the crystal 10 is adjusted to >=1.2mm/min. The crystal 10 produced by this process is sliced to obtain a silicon substrate having an oxygen concentration of >=1.8X10<18>cm<-3> and having little surface defects.