| 摘要 |
<p>A structure of a dummy cell of a one-transistor cell type dynamic RAM made up of MISFETs formed in the shape of an integrated circuit within a single semiconductor substrate, the dummy cell structure comprising a pair of first gate electrode layers which is made of a first polycrystalline silicon layer, a second gate electrode layer which is made of a second polycrystalline silicon layer formed on the semiconductor substrate between the pair of first gate electrode layers through a gate insulating film, means for applying a fixed bias voltage to the second gate electrode layer in order to operate it as a capacitor, means for applying a clear control signal to one of the pair of first gate electrode layers in order to operate it as a clearing MISFET, and means for applying a word select signal to the other first gate electrode layer in order to operate it as a transfer MISFET.</p> |
