| 摘要 |
PURPOSE:To form an excellent electrode pattern consisting of ReB6 on the part which is not masked by a photoresist film by a method wherein, after ReB6 has been vapor-deposited on a compound semiconductor substrate using a photoresist film as a mask, the ReB6 vapor-deposited on the photoresist film is removed together with the photoresist film using a stripping solution. CONSTITUTION:An SiO2 film 2 is formed on an N-type GaAs substrate 1, a quinone azide photoresist film 3, having phenol and cresol-novolac resin as the base, is formed thereon and the photoresist solution coated on the other part is removed. Besides, the SiO2 film 2 is etched using the photoresist film 2 as a mask. Then, an LaB6 film 4 is vapor-deposited at the room temperature using an electron gun. As a result, when a treatment is performed on the LaB6 film 4, having cracks on the surface, vapor-deposited on the photoresist film 3, using the photoresist stripping solution consisting of phenol and halogen organic solvent, the LaB6 film 4 is easily and completely peeled off together with the photoresist film 3. Lastly, an annealing is performed at a high temperature, and a Schottky diode is formed.
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