| 摘要 |
PURPOSE:To decrease the variation in threshold voltage of a semiconductor device, by forming a gate electrode aperture without etching a semiconductor substrate. CONSTITUTION:A semiconductor substrate 1 is provided with an active layer 2 and a high-concentration source and drain layer 3. An insulation film 4 is deposited to cover the entire surface. Ohmic electrodes 5 are then provided, and a gate electrode pattern 7 is formed with photoresist 6. After that, the insulation film 4 is etched so as to form a recess 8 but not to expose the substrate 1. The insulation film 4left within the recess 8 is then etched off so that the substrate 1 is exposed and that a gate electrode aperture 9 is provided. A gate metal is vapor deposited and the resist 6 is lifted off, so that a gate electrode 10 is formed to complete an FET. Thus, the gate electrode aperture can be formed without etching the substrate and a gate electrode as desired can be obtained. Further, possible differences in a threshold voltage can be decreased.
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