| 摘要 |
PURPOSE:To simplify a manufacturing process and increase the selection freedom of materials to be used, by constituting the electrode layer of semiconductor device with several layers containing polycrystalline layer and conductor layer. CONSTITUTION:In a thin-film transistor, a gate insulating film 4 is formed coating an active layer 3 composed of polycrystalline silicon, etc. on a glass substrate 2. On the position corresponding to the active layer, an electrode 7 composed of a polycrystalline silicon layer 5 and a conductor layer 6 is formed. By coating this electrode 7, an insulating film is formed. A source electrode 9 and a drain electrode 10 connected electrically to the active layer 3 are formed. The transistor 1 capable of high speed response is obtained, by forming the polycrystalline silicon layer 5 so thinly as to satisfy the relation, epsilonp/dp>>epsiloni/di, where dp and epsilonp are the film thickness and the dielectric constant of the polycrystalline silicon layer 5 respectively, and di and epsiloni are the film thickness and the dielectric constant of the gate insulating layer 4 respectively. |
