| 摘要 |
PURPOSE:To improve the characteristics of rectification of a hetero-junction by a method wherein the hetero-junction is formed using one conductive type crystalloid semiconductor layer as a first semiconductor layer and a hydrogenated amorphous carbon semiconductor layer as a second semiconductor layer. CONSTITUTION:In a P-N hetero-junction diode, an N-type single crystal substrate 11 consists of a crystalloid silicon, for example, as a crystalloid semiconductor layer, a P-type hydrogenated amorphous carbon (a-C:H) 13 is provided on a P-type single crystal substrate 11 as an amorphous semiconductor layer, and a P-N hetero-junction is formed. Also, the first electrode 15 consisting of aluminum is provided on the P-type a-C:H layer 13 and the second electrode 17 consisting of aluminum is provided on the surface of the N-type single crystal substrate 11 located on the side reverse to said electrode 15. As a result, the characteristics of rectification can be improved markedly, and the hetero-junction having high degree of practicability when used in a memory device, a switching element and the like can be formed.
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