Method of manufacturing a photoconductor element

摘要

The invention relates to the manufacture of a photoconductor element. According to the invention, the ratio of the B2H6/SiH4 flow rates is adjusted in a reaction chamber 2 where there is a luminescent discharge between electrodes 9, 9' with a value sufficient for the product mu tau of the mobility mu of the electrons in the resulting photoconductor element times their lifetime tau to be equal to or less than 10<-8> cm<2>/V; and an amorphous silicon layer is formed on a substrate such as a drum 1. <IMAGE>