| 摘要 |
PURPOSE:To obtain an integrated circuit of a compound semiconductor such as GaAs or the like operable at a high speed with lower power consumption, by utilizing resistance layers operating in a current saturation range as a constant current source for a current-mode logic integrated circuit. CONSTITUTION:The differential inverter circuit of a GaAr current-mode logic is constituted by transistors 27-29, which are enhancement-type Schottky gate field-effect transistors and have load resistances 30 and 31. The phase of an output terminal 25 is opposite to that of the gate input of the transistor 28 while it is common with the gate input of the transistor 27. The resistances 25 and 26 are provided by resistance layers serving as a constant current source and have a gate-to-gate distance of about 1mum. The current is saturated at an electrode-to-electrode voltage of about 0.3V and the supply voltage 23 is also stable at about 1.8V. Accordingly, the supply voltage can be decreased and the power consumption also can be decreased.
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