| 摘要 |
PURPOSE:To obtain a silver oxide cell having low inner resistance and stable discharge voltage by forming a specific silver layer onto the entire outer face of a positive electrode mold mainly composed of bivalent silver oxide. CONSTITUTION:The outer face of a positive electrode mold will reduce AgO by means of 2,3-diketo-L-glonic acid to form Ag as shown on the formula. Since the silver layer formed through this reducing reaction is oxidized by inner AgO, a boundary layer is formed from the outside of the positive electrode mold through solid phase reaction of Ag-Ag2O-AgO and 1.5V cell voltage of Ag2O is obtained. In the surface silver layer of a storing cell, Ag is oxidized into Ag2O by AgO in the positive electrode mold but Ag2O is reduced through function of 2,3-diketo-L-glonic acid, thereby Al layer is never missed from the positive electrode mold and the inner resistance of cell is never increased. |
