| 摘要 |
PURPOSE:To improve the yield in manufacture of thin-film transistors, by providing source and drain electrodes such that they are electrically connected with source and drain regions. CONSTITUTION:Source and drain electrodes 2 and 3 of a thin-film transistor are provided on an insulating substrate 1 and are electrically connected with source and drain regions 5 and 6, which are formed in a self-aligned manner by implanting ions with a gate electrode 8 and others used as a mask. Such construction permits the transistor to be manufactured with a lower registering precision and facilitates the formation of a large-area thin-film device. Further, since the source and drain electrodes 2 and 3 are electrically isolated from a gate metal 8 by a semiconductor layer 4 as well as by an insulation layer 7, the need of the perforating the insulation layer can be eliminated and the construction can be simplified. Thus, the yield can be improved. |
