| 摘要 |
PURPOSE:To obtain a monolithic integrated circuit of power MOSFET which obtains substantially equal characteristics to those of individual elements by using the back surface of a chip as the drain electrode of the MOSFET and forming a structure wherein electrons are fed from the surface of the chip to a back surface substrate side. CONSTITUTION:A p-type semiconductor region 15 is formed on a region except a portion formed with a power MOSFET on the main surface of an n-type semiconductor substrate 14, and an n-type high impurity density buried layer 4 is formed to become a floating collector in the region 15. An n-type epitaxially grown layer 2 is formed, a p-type separating region 3 is formed of form an n-type insular region 2a. A p-type base region 6 and an n-type source region 7 of the MOSFET are formed in the layer 2, and n-p-n transistor or resistors are formed as elements for forming an integrated circuit in other insular region 2a. a monolithic integrated circuit is obtained by covering it with source electrode 10, gate electrode 8, drain electrode 11 of the MOSFET and electrodes of other element. |
