| 摘要 |
PURPOSE:To form an electron beam resist pattern of side wall shape approx. vertically by dividing an exposing pattern into a plurality in case of exposing a fine pattern of 1mum or less of one side length, and reducing the rectangular size of the beam. CONSTITUTION:When exposing a rectangular pattern 1, it is divided, for example, into three rectangular patterns 3, and an electron beam is emitted. The electron beam size of x-direction is reduced to 1mum or less by this division to decrease the spread of the beam by space charge effect of the beam of x- direction. Accordingly, the resist pattern having the side wall approx. vertical can be formed.
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