| 摘要 |
PURPOSE:To enable the use of the titled device as the light source of a photo IC having photo elements integrated monolithically by a method wherein an optical waveguide and a forward mesa type resonator are formed on a semiconductor substrate provided with a ridge, and laser beams are led out through the optical waveguide. CONSTITUTION:An N type Ga0.7Al0.3As clad layer 2, N type Ga0.92Al0.08As optical waveguide layer 3, and an N type Ga0.7Al0.3As clad layer 4 are grown on the N type GaAs substrate 1 having the ridge 1' by the liquid phase epitaxial growing method. Then, the ridge 4' is formed, and an N type Ga0.7Al0.3As clad layer 5, a Ga0.95Al0.05As active layer 6, a P type Ga0.7Al0.3As clad layer 7, and an N type GaAs layer 8 are grown, resulting in the formation of a double hetero structure. A P<+> region 13 is formed by stripe-form Zn diffusion from the surface. CrAu is evaporated and turned to a positive electrode 10, and parts 12 are cut down by chemical etching into the forward mesa type resonator. Then, AuGeNi is evaporated and turned to a negative electrode 9. Laser oscillation takes place in an active layer 6, and the laser beam is led out through the optical waveguide layer constituting a directive coupler. |
