| 摘要 |
PURPOSE:To uniformly, readily and economically form a high quality single crystal silicon layer on an SiO2 film by forming thermal oxide films on a plurality of high quality single crystal silicon substrates, superposing them, heat treating them to integrate them, and cutting again thin substrates. CONSTITUTION:Thermal oxide films 102 are formed on high quality single crystal silicon substrates 101, and phosphorus glass layers 104 are formed on the film 102 and the back surface 103 of the substrate. Many substrates are superposed, heat treated at high temperature in nitrogen atmosphere while pressing pressure to integrally bond the substrates to obtain an ingot 108 of repeated single crystal silicon layers and insulator layers. The ingot 108 is sliced into many new substrates in parallel with the oxide film layer 110 at the position 109 near the boundary between the oxide film of the substrate and the silicon, and the cut face 111 is mirror-polished.
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