| 摘要 |
PURPOSE:To obtain a semiconductor device which can obtain a large electrostatic capacity while reducing the size of MIM capacity by laminating MIM capacity. CONSTITUTION:A first face metal film 4 is formed through a first insulating film 3 on a first primary metal film 2 formed on a semiconductor substrate 1, and a second face metal film 6 is formed though a second insulating film 5 with the film as the second primary metal film. MIM capacity value C is the sum of the electrostatic capacity between the films 2 and 4 and the electrostatic capacity between the films (second primary metal film) 4 and 6.
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