| 摘要 |
PURPOSE:To improve doping controllability by using specific organic compound as doner atom in case of forming III-V group compound semiconductor thin film which exhibits N-type. CONSTITUTION:An organic compound represented by formula RR'X, where X is VI group elements such as S, Se, Te, R, R' are alkyl group, is used ad doner atom in case of forming a III-V group compound semiconductor layer which exhibits N-type. This organic compound has low reactivity and stable liquid at room temperature, can be refined by distillation, controlled in supplying amount by bubbling of carrier gas similarly to the III group organic metal compound, and readily decomposed at 500-800 deg.C of general growing temperature of MOSCVD of III-V group compound semiconductor thin film. Since its reactivity is low, part of RR'X supplied by the reaction with vessel or pipe material or III group organic metal compound is not lost.
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